PREPARATION OF LARGE-AREA MONO-CRYSTALLINE SILICON THIN WINDOWS

被引：46

作者：

CHEUNG, NW ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1980年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.1136404

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1212 / 1216

页数：5

共 15 条

[1] SODIUM-HYDROXIDE SOLUTION SHOWS SELECTIVE ETCHING OF BORON-DOPED SILICON [J].

BARYCKA, I ;

TETERYCZ, H ;

ZNAMIROWSKI, Z .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) :345-346

[2] ETHYLENE DIAMINE-PYROCATECHOL-WATER MIXTURE SHOWS ETCHING ANOMALY IN BORON-DOPED SILICON [J].

BOHG, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :401-&

[3] STUDIES OF THE SI-SIO2 INTERFACE BY MEV ION CHANNELING [J].

CHEUNG, NW ;

FELDMAN, LC ;

SILVERMAN, PJ ;

STENSGAARD, I .

APPLIED PHYSICS LETTERS, 1979, 35 (11) :859-861

[4]

CHEUNG NW, 1979, OCT P S THIN FILM PH

[5]

Chu W.K., 1978, BACKSCATTERING SPECT, V1st ed., DOI 10.1016/B978-0-12-173850-1.50008-9

[6] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE [J].

FELDMAN, LC ;

SILVERMAN, PJ ;

WILLIAMS, JS ;

JACKMAN, TE ;

STENSGAARD, I .

PHYSICAL REVIEW LETTERS, 1978, 41 (20) :1396-1399

[7] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J].

FINNE, RM ;

KLEIN, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :965-&

[8] CHANNELING AND RELATED EFFECTS IN MOTION OF CHARGED-PARTICLES THROUGH CRYSTALS [J].

GEMMELL, DS .

REVIEWS OF MODERN PHYSICS, 1974, 46 (01) :129-227

[9] ETHYLENE DIAMINE-CATECHOL-WATER MIXTURE SHOWS PREFERENTIAL ETCHING OF P-N JUNCTION [J].

GREENWOOD, JC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) :1325-+

[10] DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON [J].

HORN, FH .

PHYSICAL REVIEW, 1955, 97 (06) :1521-1525

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