DEFECTS PRODUCED IN SILICON BY HIGH-ENERGY ELECTRON AND GAMMA-IRRADIATION AND THEIR EFFECTS UPON RECOMBINATION LIFETIME

被引：0
作者：
BROTHERTON, SD [1 ]
BRADLEY, P [1 ]
机构：
[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C98 / C98
页数：1
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