MOLECULAR-BEAM EPITAXIAL-GROWTH OF INASSB STRAINED LAYER SUPERLATTICES - CAN NATURE DO IT BETTER

被引:57
作者
FERGUSON, IT
NORMAN, AG
JOYCE, BA
SEONG, TY
BOOKER, GR
THOMAS, RH
PHILLIPS, CC
STRADLING, RA
机构
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,BLACKETT LAB,DEPT PHYS,LONDON SW7 2BZ,ENGLAND
[2] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND
关键词
D O I
10.1063/1.105720
中图分类号
O59 [应用物理学];
学科分类号
摘要
Molecular beam epitaxial growth of a normally homogeneous InAs0.5Sb0.5 alloy below 430-degrees-C results in its coherent phase separation into platelets of two different alloy compositions with tetragonally distorted crystal lattices. This produces a "natural" strained layer superlattice (n-SLS) with clearly defined interfaces modulated in the [001] growth direction. A description of the n-SLS growth mode in InAsSb is outlined, and the optical response of a n-SLS structure, which extends to 12.5-mu-m-considerably further than that of a homogeneous InAs0.5Sb0.5 layer (8.9-mu-m)-is reported.
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页码:3324 / 3326
页数:3
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