TIME-RESOLVED PHOTO-LUMINESCENCE IN ALPHA-AS2S3

被引：19

作者：

SHAH, J

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.21.4751

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4751 / 4756

页数：6

共 18 条

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
ANDERSON, PW
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955
[2] TIME-RESOLVED PHOTO-LUMINESCENCE SPECTROSCOPY IN AMORPHOUS AS2S3
BOSCH, MA
SHAH, J
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (02) : 118 - 121
[3] RADIATIVE RECOMBINATION IN AMORPHOUS AS2SE3
CERNOGOR.J
MOLLOT, F
BENOITAL.C
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (02): : 401 - 407
[4] EMIN D, 1979, B AM PHYS SOC, V24, P244
[5] CHARGED DEFECT-PAIR LUMINESCENCE IN A-AS2S3
HIGASHI, GS
KASTNER, M
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (21): : L821 - L826
[6] PAIR SPECTRA IN GAP
HOPFIELD, JJ
GERSHENZON
THOMAS, DG
[J]. PHYSICAL REVIEW LETTERS, 1963, 10 (05) : 162 - &
[7] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
KASTNER, M
ADLER, D
FRITZSCHE, H
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507
[8] EVIDENCE FOR NEUTRALITY OF LUMINESCENCE-CENTERS IN CHALCOGENIDE GLASSES
KASTNER, M
HUDGENS, SJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (06): : 665 - 681
[9] OPTICALLY DETECTED ELECTRON-SPIN RESONANCE IN AMORPHOUS SILICON
MORIGAKI, K
DUNSTAN, DJ
CAVENETT, BC
DAWSON, P
NICHOLLS, JE
NITTA, S
SHIMAKAWA, K
[J]. SOLID STATE COMMUNICATIONS, 1978, 26 (12) : 981 - 985
[10] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS
MOTT, NF
DAVIS, EA
STREET, RA
[J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (05) : 961 - 996

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