HIGH-PERFORMANCE W-BAND INALAS-INGAAS-INP HEMTS

被引：16
|
作者：
STREIT, DC
TAN, KL
DIA, RM
HAN, AC
LIU, PH
YEN, HC
CHOW, PD
机构：
[1] TRW Electronics and Technology Division, Redondo Beach
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 13期
关键词：
TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19910716
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
0.15-mu-m T-gate lattice-matched In0.52Al0.48As-In0.53 Ga0.47As-InP HEMTs with a device minimum noise figure of 1.7 dB with 7.7 dB associated gain at 93 GHz have been fabricated. A single-ended active mixer was fabricated using these devices, and a conversion gain of 2.4 dB was measured with 7.3 dB single-sideband noise figure at 94 GHz. This is the first reported active mixer conversion gain at W band.
引用
收藏
页码：1149 / 1150
页数：2
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