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ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF INP/INGAASP ON NONPLANAR INP SUBSTRATES - APPLICATION TO MULTIPLE QUANTUM-WELL LASERS
被引:19
作者:
BHAT, R
KAPON, E
WERNER, J
HWANG, DM
STOFFEL, NG
KOZA, MA
机构:
[1] Bellcore, Red Bank
关键词:
D O I:
10.1063/1.102665
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We report the growth of InGaAs and InGaAsP quantum well heterostructures on InP substrates with [011̄] oriented grooves. We have shown that growth of these materials on non-planar substrates can result in lattice-mismatched layers on orientations other than (100) which in some cases gives rise to dislocations. In addition, the lateral patterning of quantum wells and quantum wire-like structures has been demonstrated in this material system. Finally, a quantum well laser, wherein lateral patterning of the well thickness was achieved by growing in a flat-bottomed groove, was fabricated. Without any additional growth steps these lasers exhibit a single stable spatial mode due to the waveguide formed at the groove.
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页码:863 / 865
页数:3
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