STUDY OF PLANARIZED SPUTTER-DEPOSITED SIO2

被引：70

作者：

TING, CY ^{[1
]}

VIVALDA, VJ ^{[1
]}

SCHAEFER, HG ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 03期

关键词：

D O I：

10.1116/1.569519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1105 / 1112

页数：8

共 16 条

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[10]

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