NUMERICAL SOLUTIONS FOR A ONE-DIMENSIONAL SILICON N-P-N TRANSISTOR

被引:54
作者
GOKHALE, BV
机构
关键词
D O I
10.1109/T-ED.1970.17036
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:594 / &
相关论文
共 9 条
[1]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[2]   CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].
CAUGHEY, DM ;
THOMAS, RE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+
[3]   AN ACCURATE NUMERICAL ONE-DIMENSIONAL SOLUTION OF P-N JUNCTION UNDER ARBITRARY TRANSIENT CONDITIONS [J].
DEMARI, A .
SOLID-STATE ELECTRONICS, 1968, 11 (11) :1021-+
[4]   AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J].
DEMARI, A .
SOLID-STATE ELECTRONICS, 1968, 11 (01) :33-+
[5]   COMPUTER-AIDED TRANSISTOR DESIGN CHARACTERIZATION AND OPTIMIZATION [J].
GHOSH, HN ;
DELAMONE.FH ;
DONO, NR .
SOLID-STATE ELECTRONICS, 1967, 10 (07) :705-&
[6]  
GUMMEL HK, 1964, IEEE T, VED11, P455
[7]  
LINDMAYER J, 1965, FUNDAMENTALS SEMICON
[8]   THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J].
MOLL, JL ;
ROSS, IM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01) :72-78
[9]  
Sparkes JJ, 1964, J ELECTRON CONTR, V16, P153