NUMERICAL SOLUTIONS FOR A ONE-DIMENSIONAL SILICON N-P-N TRANSISTOR

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[3] AN ACCURATE NUMERICAL ONE-DIMENSIONAL SOLUTION OF P-N JUNCTION UNDER ARBITRARY TRANSIENT CONDITIONS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (11) : 1021 - +

[4] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 33 - +

[5] COMPUTER-AIDED TRANSISTOR DESIGN CHARACTERIZATION AND OPTIMIZATION [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 705 - &

[6] GUMMEL HK, 1964, IEEE T, VED11, P455

[7] LINDMAYER J, 1965, FUNDAMENTALS SEMICON

[8] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[9] Sparkes JJ, 1964, J ELECTRON CONTR, V16, P153

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[3] AN ACCURATE NUMERICAL ONE-DIMENSIONAL SOLUTION OF P-N JUNCTION UNDER ARBITRARY TRANSIENT CONDITIONS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (11) : 1021 - +

[4] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 33 - +

[5] COMPUTER-AIDED TRANSISTOR DESIGN CHARACTERIZATION AND OPTIMIZATION [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 705 - &

[6] GUMMEL HK, 1964, IEEE T, VED11, P455

[7] LINDMAYER J, 1965, FUNDAMENTALS SEMICON

[8] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[9] Sparkes JJ, 1964, J ELECTRON CONTR, V16, P153