PREPARATION AND RAPID THERMAL ANNEALING EFFECT OF (BA,SR)TIO3 THIN-FILMS

被引：34

作者：

ICHINOSE, N

OGIWARA, T

机构：

[1] Department of Materials Science and Engineering, School of Science and Engineering, Waseda University, Shinjuku-ku, 169

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

BARIUM-STRONTIUM TITANATE; THIN FILMS; RF MAGNETRON SPUTTERING; DIELECTRIC CONSTANT; RAPID THERMAL ANNEALING;

D O I：

10.1143/JJAP.34.5198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we describes the effect of rapid thermal annealing on the electrical properties of (Ba0.5Sr0.5TiO3) (BST) thin films. BST thin films were grown by the rf magnetron sputtering method with rapid thermal annealing (RTA) at various temperatures. When BST thin films were deposited directly on boron-doped Si(100) (P-type) substrate, silicon-diffused oxide interlayers were formed between BST and P-type Si(100) depending on the RTA temperature. The dielectric constant of BST thin film was improved by RTA and the maximum value (similar to 100) was obtained at 700 degrees C.

引用

页码：5198 / 5201

页数：4

共 3 条

[1]

KINGERY WD, 1976, UHLMANN INTRO CERAMI, pCH18

[2] PREPARATION AND PROPERTIES OF RU AND RUO2 THIN-FILM ELECTRODES FOR FERROELECTRIC THIN-FILMS [J].

MAIWA, H ;

ICHINOSE, N ;

OKAZAKI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5223-5226

[3] PREPARATION OF PB(ZR,TI)O-3 THIN-FILMS ON IR AND IRO2 ELECTRODES [J].

NAKAMURA, T ;

NAKAO, Y ;

KAMISAWA, A ;

TAKASU, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5207-5210

← 1 →