INTENSE BLUE EMISSION FROM POROUS BETA-SIC FORMED ON C+-IMPLANTED SILICON

被引：154

作者：

LIAO, LS ^{[1
]}

BAO, XM ^{[1
]}

YANG, ZF ^{[1
]}

MIN, NB ^{[1
]}

机构：

[1] NANJING UNIV,NATL SOLID STATE MICROSTUCT LAB,NANJING 210093,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 18期

关键词：

D O I：

10.1063/1.113990

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon ions were implanted into crystal silicon wafers at an energy of 50 keV and with a dose of 1017 cm-2 followed by thermal annealing. A layer of polycrystalline β-SiC was formed beneath the sample surface. Porous nanometer structures were prepared by conventional anodization. At room temperature, the samples exhibit a blue luminescence peak at 2.79 eV (445 nm), which is higher than the energy gap of bulk β-SiC (2.2 eV), and its intensity is stronger than that of the reference porous silicon. The results could be explained by the quantum confinement effect.© 1995 American Institute of Physics.

引用

页码：2382 / 2384

页数：3

共 14 条

[1] CONTROL OF POROUS SILICON LUMINESCENT PATTERN-FORMATION BY ION-IMPLANTATION [J].

BAO, XM ;

YANG, HQ .

APPLIED PHYSICS LETTERS, 1993, 63 (16) :2246-2247

[2] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].

BEALE, MIJ ;

BENJAMIN, JD ;

UREN, MJ ;

CHEW, NG ;

CULLIS, AG .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636

[3] FORMATION OF SIC IN SILICON BY ION IMPLANTATION [J].

BORDERS, JA ;

PICRAUX, ST ;

BEEZHOLD, W .

APPLIED PHYSICS LETTERS, 1971, 18 (11) :509-&

[4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[5] LUMINESCENCE OF DONAR-ACCEPTOR PAIRS IN CUBIC SIC [J].

CHOYKE, WJ ;

PATRICK, L .

PHYSICAL REVIEW B, 1970, 2 (12) :4959-&

[6] FABRICATION OF 6H-SIC LIGHT-EMITTING-DIODES BY A ROTATION DIPPING TECHNIQUE - ELECTROLUMINESCENCE MECHANISMS [J].

IKEDA, M ;

HAYAKAWA, T ;

YAMAGIWA, S ;

MATSUNAMI, H ;

TANAKA, T .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :8215-8225

[7] BLUE EMISSION OF POROUS SILICON [J].

LEE, MK ;

PENG, KR .

APPLIED PHYSICS LETTERS, 1993, 62 (24) :3159-3160

[8]

MAHER DM, 1986, MATER RES SOC S P, V52, P93

[9] BLUE-GREEN LUMINESCENCE FROM POROUS SILICON-CARBIDE [J].

MATSUMOTO, T ;

TAKAHASHI, J ;

TAMAKI, T ;

FUTAGI, T ;

MIMURA, H ;

KANEMITSU, Y .

APPLIED PHYSICS LETTERS, 1994, 64 (02) :226-228

[10] ION-IMPLANTATION OF POROUS SILICON [J].

PENG, C ;

FAUCHET, PM ;

REHM, JM ;

MCLENDON, GL ;

SEIFERTH, F ;

KURINEC, SK .

APPLIED PHYSICS LETTERS, 1994, 64 (10) :1259-1261

← 1 2 →