ELECTROLUMINESCENCE FROM THIN-FILM OF A SEMICONDUCTING OLIGOTHIOPHENE DEPOSITED IN ULTRAHIGH-VACUUM

被引：77

作者：

UCHIYAMA, K ^{[1
]}

AKIMICHI, H ^{[1
]}

HOTTA, S ^{[1
]}

NOGE, H ^{[1
]}

SAKAKI, H ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

SYNTHETIC METALS | 1994年 / 63卷 / 01期

关键词：

D O I：

10.1016/0379-6779(94)90249-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thin film of a semiconducting oligomer of dimethylsexithiophene (DMSxT) deposited in ultrahigh vacuum has a highly ordered layered structure. We have fabricated the organic light-emitting diodes (LEDs) using DMSxT and carried out electrical and optical measurements. A red-orange emission is clearly observed above 4 V forward bias. These LEDs have a configuration of Al/DMSxT/ITO and show a rectifying ratio of about 1500 at +/-10 V bias. This is the first report of an organic LED using a semiconducting oligomer as a light-emitting layer.

引用

页码：57 / 59

页数：3

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