PROSPECTS FOR ION-BOMBARDMENT AND ION-IMPLANTATION IN GAAS AND INP DEVICE FABRICATION

被引：35

作者：

MORGAN, DV ^{[1
]}

EISEN, FH ^{[1
]}

EZIS, A ^{[1
]}

机构：

[1] ROCKWELL INT, THOUSAND OAKS, CA 91360 USA

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1981年 / 128卷 / 04期

关键词：

ION BOMBARDMENT;

D O I：

10.1049/ip-i-1.1981.0033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The process of ion implantation and ion damage in GaAs and InP are considered. A survey of the basic physics of the implantation/damage processes is outlined together with studies on the annealing required to activate the ions for semiconductor doping. The prospects and current achievements of this technological process in device fabrication are discussed.

引用

页码：109 / 130

页数：22

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