A PHYSICAL MODEL OF THE TRANSIT-TIME IN BIPOLAR-TRANSISTORS

被引：9

作者：

WENG, J

机构：

[1] Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore, 2263, Nanyang Avenue

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 08期

关键词：

D O I：

10.1016/0038-1101(93)90201-Z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new compact physical model of the forward transit time tau(f) in bipolar transistors. The behaviour of tau(f) in response to the collector current density j(C) and the applied base-collector voltages V(BC) is described precisely by using only basic physical parameters. The comparisons between both the model results and results obtained from 1-D device simulations and experimental measurements for advanced self-aligned high-speed Poly-Si bipolar transistors having various technological data exhibit a very good agreement.

引用

页码：1197 / 1201

页数：5

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