CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM CU+1 PRECURSORS IN THE PRESENCE OF WATER-VAPOR

被引：66

作者：

GELATOS, AV

MARSH, R

KOTTKE, M

MOGAB, CJ

机构：

[1] Advanced Products Research, Development Laboratory, Motorola Inc., Austin, TX 78721

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 20期

关键词：

D O I：

10.1063/1.110304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Copper films have been deposited by low pressure chemical vapor deposition from mixtures of the Cu+1 precursor copper hexafluoroacetylacetonate vinyltrimethylsilane and water vapor. The addition of water vapor at the optimum concentration more than doubles the deposition rate and substantially reduces the nucleation time without adversely affecting the copper film resistivity, but excess amounts of water vapor significantly increase the copper resistivity. Auger electron spectroscopy analysis detects no impurities in copper films deposited under optimum water conditions, but detects oxygen in films deposited under excess water conditions, suggesting copper oxide formation.

引用

页码：2842 / 2844

页数：3

共 12 条

[1]

Awaya N., 1991, 1991 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.91CH3017-1), P37, DOI 10.1109/VLSIT.1991.705978

[2] MECHANISMS OF COPPER CHEMICAL VAPOR-DEPOSITION [J].