INFLUENCE OF THE INTERACTION POTENTIAL ON SIMULATED SPUTTERING AND REFLECTION DATA

被引:20
作者
ECKSTEIN, W [1 ]
HACKEL, S [1 ]
HEINEMANN, D [1 ]
FRICKE, B [1 ]
机构
[1] UNIV KASSEL,W-3500 KASSEL,GERMANY
来源
ZEITSCHRIFT FUR PHYSIK D-ATOMS MOLECULES AND CLUSTERS | 1992年 / 24卷 / 02期
关键词
D O I
10.1007/BF01426703
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
The TRIM.SP program which is based on the binary collision approximation was changed to handle not only repulsive interaction potentials, but also potentials with an attractive part. Sputtering yields, average depth and reflection coefficients calculated with four different potentials are compared. Three purely repulsive potentials (Moliere, Kr-C and ZBL) are used and an ab initio pair potential, which is especially calculated for silicon bombardment by silicon. The general trends in the calculated results are similar for all potentials applied, but differences between the repulsive potentials and the ab initio potential occur for the reflection coefficients and the sputtering yield at large angles of incidence.
引用
收藏
页码:171 / 176
页数:6
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