LUMINESCENCE FROM POROUS SILICON

被引：32

作者：

CHEN, X ^{[1
]}

UTTAMCHANDANI, D ^{[1
]}

TRAGERCOWAN, C ^{[1
]}

ODONNELL, KP ^{[1
]}

机构：

[1] UNIV STRATHCLYDE, DEPT ELECT & ELECTR ENGN, GLASGOW G4 0NG, SCOTLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期

关键词：

D O I：

10.1088/0268-1242/8/1/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Predominantly orange-red, but occasionally green, blue or deep red luminescence is observed following electrochemical etching of p-type epitaxial silicon in HF solution. Photoluminescence and cathodoluminescence of the same samples are compared. The dependence of the photoluminescence spectrum on the sample temperature and on the excitation density, considered together with its non-exponential decay profile, suggest that the dominant luminescence process in porous silicon is recombination of quantum-confined carriers in a disordered medium. In addition, cathodoluminescence reveals the presence of 'hot spots' which show bright features of uncertain origin.

引用

页码：92 / 96

页数：5

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