A simple method for measuring the linewidth enhancement factor a of a semiconductor laser by optical injection locking is described. Without knowledge of the absolute values of detuning and the optical injection level, the value of alpha is evaluated from only changes in optical power in the stable optical injection-locking state. The value of alpha of a 0.83-mu-m channeled substrate planar laser is evaluated to be 2.65 +/- 0.2. The measurement error of this method is also discussed.
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页码:1128 / 1130
页数:3
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Hayashi K., 1987, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE70, P306
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PLESSEY RES CASWELL LTD, ALLEN CLARK RES CTR, TOWCESTER NN12 8EQ, NORTHANTS, ENGLANDPLESSEY RES CASWELL LTD, ALLEN CLARK RES CTR, TOWCESTER NN12 8EQ, NORTHANTS, ENGLAND
OSINSKI, M
;
BUUS, J
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PLESSEY RES CASWELL LTD, ALLEN CLARK RES CTR, TOWCESTER NN12 8EQ, NORTHANTS, ENGLANDPLESSEY RES CASWELL LTD, ALLEN CLARK RES CTR, TOWCESTER NN12 8EQ, NORTHANTS, ENGLAND
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PLESSEY RES CASWELL LTD, ALLEN CLARK RES CTR, TOWCESTER NN12 8EQ, NORTHANTS, ENGLANDPLESSEY RES CASWELL LTD, ALLEN CLARK RES CTR, TOWCESTER NN12 8EQ, NORTHANTS, ENGLAND
OSINSKI, M
;
BUUS, J
论文数: 0引用数: 0
h-index: 0
机构:
PLESSEY RES CASWELL LTD, ALLEN CLARK RES CTR, TOWCESTER NN12 8EQ, NORTHANTS, ENGLANDPLESSEY RES CASWELL LTD, ALLEN CLARK RES CTR, TOWCESTER NN12 8EQ, NORTHANTS, ENGLAND