SYNCHROTRON RADIATION-DAMAGE MECHANISM OF X-RAY MASK MEMBRANES IRRADIATED IN HELIUM ENVIRONMENT

被引：5

作者：

ARAKAWA, T ^{[1
]}

OKUYAMA, H ^{[1
]}

OKADA, K ^{[1
]}

NAGASAWA, H ^{[1
]}

SYOKI, T ^{[1
]}

YAMAGUCHI, Y ^{[1
]}

机构：

[1] HOYA CORP, AKISHIMA, TOKYO 196, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

X-RAY LITHOGRAPHY; SYNCHROTRON RADIATION; X-RAY MASK; RADIATION DAMAGE; SILICON NITRIDE; SILICON CARBIDE;

D O I：

10.1143/JJAP.31.4459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of X-ray mask membrane displacement induced by synchrotron radiation (SR) has been discussed. Silicon nitride (SiN) and silicon carbide (SiC) membranes were irradiated by SR in a 1 atm helium ambient. SR-induced displacement for both membranes was 25-97 nm (simga). Oxygen concentration in both SiN and SiC was below 0.01 in 0 / Si atomic ratio. Although an increase in dangling bond density of SiN was observed, no remarkable increase in spin density was detected in SiC. Moreover, the most important finding was that thin oxides were grown on the membrane surface after SR irradiation. From these results, it is considered that the oxide growth on SiC membrane surfaces, and both the oxide growth and the increase of dangling bond density in SiN play an important role in the SR-induced displacement for the X-ray mask membranes.

引用

页码：4459 / 4462

页数：4

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