PROPERTIES OF HETEROJUNCTION OF SI/POLY(3-METHYLTHIOPHENE) AS A FUNCTION OF POLYMERIZATION CONDITION

被引：8

作者：

KOKADO, H ^{[1
]}

HOSOKAWA, F ^{[1
]}

HOSHINO, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1A期

关键词：

POLY(3-METHYLTHIOPHENE); HETEROJUNCTION; CONDUCTING POLYMER; N-TYPE SILICON; ORGANIC INORGANIC INTERFACE; STABILITY; CHRONOPOTENTIOMETRY; AUGER ANALYSIS; FT-IR; SEM;

D O I：

10.1143/JJAP.32.189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A detailed analysis of poly(3-methylthiophene) (P3MeT) films deposited on a n-Si substrate is presented. In order to perform junction analysis, potentiometric measurements during the growth of the film, current-voltage measurements, degradation of electrical properties, FT-IR (Fourier transform infrared) measurements, and SEM (scanning electron microscope) observations are studied. New insights into the junction are obtained. The rectifying behavior is greatly improved by employing sandblasted n-Si as a substrate, compared with a nonsandblasted n-Si substrate. Based on these results, junction formation is described as the evolution of covalent bond formation between hydroxy groups on the n-Si surface and a polymer film. The results are supported by FT-IR measurements of the sandblasted n-Si surface. A covalent bond destruction model is used to describe degradation behavior of the P3MeT/sandblasted n-Si heterojunction.

引用

页码：189 / 194

页数：6

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