SURFACE STATES ON SILICON AND GERMANIUM SURFACES

被引：25

作者：

STATZ, H

DEMARS, G

DAVIS, L

ADAMS, A

机构：

来源：

PHYSICAL REVIEW | 1957年 / 106卷 / 03期

关键词：

D O I：

10.1103/PhysRev.106.455

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：455 / 464

页数：10

共 19 条

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[3]

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[5]

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[6]

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[7] DISTRIBUTION AND CROSS-SECTIONS OF FAST STATES ON GERMANIUM SURFACES [J].

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BRATTAIN, WH .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05) :1041-1058

[8]

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[9] RELAXATION TIME OF SURFACE STATES ON GERMANIUM [J].

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[10] WATER-VAPOR-INDUCED N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J].

KINGSTON, RH .

PHYSICAL REVIEW, 1955, 98 (06) :1766-1775

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