THE INITIAL-STAGES OF NISI2 EPITAXY ON CLEAN SI(111), SI(100) AND SI(110) SURFACES

被引：28

作者：

DOLBAK, AE ^{[1
]}

OLSHANETSKY, BZ ^{[1
]}

STENIN, SI ^{[1
]}

TEYS, SA ^{[1
]}

GAVRILOVA, TA ^{[1
]}

机构：

[1] NOVOSIBIRSK STATE UNIV,NOVOSIBIRSK 630090,USSR

来源：

SURFACE SCIENCE | 1991年 / 247卷 / 01期

关键词：

D O I：

10.1016/0039-6028(91)90192-U

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces caused by Ni segregation to the surface from the bulk due to the decrease of its solubility in silicon when lowering the temperature were studied by SEM, LEED and AES. There are two possible states of Ni on silicon surfaces depending on the cooling rate. These are manifested in the structure of the silicon surfaces, the sizes of epitaxial islands and their density on the surface.

引用

页码：32 / 42

页数：11

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