MICROSTRIP IMPATT OSCILLATOR WITH HIGH LOCKING FIGURE OF MERIT

被引：5
作者：
GLANCE, B
机构：
[1] Crawford Hill Laboratory, Bell Telephone Laboratories Inc., Holmdel
来源：
PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 11期
关键词：
D O I：
10.1109/PROC.1969.7452
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Microstrip IMPATT oscillators have been built at X-band and V-band in order to obtain hybrid integrated power sources for locked amplifier applications. It is shown that using a microstrip circuit shorter than a half-wavelength gives the highest locking figure of merit and therefore the largest possible locking range for a given gain. A figure of merit of 0.10 has been obtained for a locking gain of 20 dB. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.
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页码：2052 / &
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