GAS-PHASE AND SURFACE-REACTIONS IN XENON LAMP-ASSISTED ORGANOMETALLIC VAPOR-PHASE EPITAXY OF ZNSE

被引:25
作者
FUJITA, S
TAKEUCHI, FY
FUJITA, S
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 11期
关键词
D O I
10.1143/JJAP.27.L2019
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L2019 / L2021
页数:3
相关论文
共 4 条
[1]   GROWTH-RATE ENHANCEMENT BY XENON LAMP IRRADIATION IN ORGANOMETALLIC VAPOR-PHASE EPITAXY OF ZNSE [J].
FUJITA, S ;
TANABE, A ;
SAKAMOTO, T ;
ISEMURA, M ;
FUJITA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12) :L2000-L2002
[2]  
FUJITA S, IN PRESS J CRYST GRO
[3]   GROWTH OF ZNSXSE1-X BY MBE ON (100)GAAS SUBSTRATES - EFFECT OF LATTICE-MATCHING [J].
MATSUMURA, N ;
ISHIKAWA, K ;
SARAIE, J ;
YODOGAWA, Y .
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :41-45
[4]   MOCVD GROWTH OF ZNSXSE1-X EPITAXIAL LAYERS LATTICE-MATCHED TO GAAS USING ALKYLS OF ZN, S AND SE [J].
MITSUHASHI, H ;
MITSUISHI, I ;
KUKIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11) :L864-L866