INDENTATION HARDNESS AND SEMICONDUCTOR-METAL TRANSITION OF GERMANIUM AND SILICON

被引：95

作者：

GERK, AP ^{[1
]}

TABOR, D ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

NATURE | 1978年 / 271卷 / 5647期

关键词：

D O I：

10.1038/271732a0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：732 / 733

页数：2

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[8]

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