A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU/N-GAAS SCHOTTKY CONTACTS DUE TO MECHANICAL POLISHING

被引：3
|
作者：
EVERAERT, JL [1 ]
VANMEIRHAEGHE, RL [1 ]
LAFLERE, WH [1 ]
CARDON, F [1 ]
机构：
[1] LAB KRISTALLOG & STUDIE VASTE STOF,B-9000 GHENT,BELGIUM
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 04期
关键词：
D O I：
10.1088/0268-1242/10/4/021
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ballistic electron emission microscopy (BEEM) has been applied, together with more classical methods such as current-voltage and capacitance-voltage measurements, to determine the barrier height change of Au/n-GaAs due to mechanical polishing. An increase of the barrier height is found, which is explained by the passivation of Fermi level pinning defects by hydrogen. Further evidence for the interaction of hydrogen with the semiconductor is given. It is shown that BEEM is an important technique for the measurement of barrier height changes caused by semiconductor processing which deteriorates the electrical characteristics of the devices and consequently leads to a failure of the more classical methods.
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收藏
页码：504 / 508
页数：5
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