MOTT-HUBBARD LOCALIZATION IN A MODEL OF THE ELECTRONIC SUBSYSTEM OF DOPED FULLERIDES

被引：0

作者：

Dovhopyaty, Yu. ^{[1
]}

Didukh, L. ^{[1
]}

Kramar, O. ^{[1
]}

Skorenkyy, Yu. ^{[1
]}

Drohobitskyy, Yu. ^{[2
]}

机构：

[1] Ternopil Natl Tech Univ, 56 Ruska Str, UA-46001 Ternopol, Ukraine

[2] Ternopil Natl Pedag Univ, UA-46027 Ternopol, Ukraine

来源：

UKRAINIAN JOURNAL OF PHYSICS | 2012年 / 57卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A microscopical model of doped fulleride electronic subsystem taking the triple orbital degeneracy of energy states into account is considered within the configurational-operator approach. Using the Green function method, the energy spectrum at the integer band filling n = 1 corresponding to AC60 compounds is calculated. A possible correlation-driven metal-insulator transition within the model is discussed.

引用

页码：920 / 928

页数：9

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