GAN/ALN DIGITAL ALLOY SHORT-PERIOD SUPERLATTICES BY SWITCHED ATOMIC LAYER METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：78

作者：

KHAN, MA ^{[1
]}

KUZNIA, JN ^{[1
]}

OLSON, DT ^{[1
]}

GEORGE, T ^{[1
]}

PIKE, WT ^{[1
]}

机构：

[1] JET PROP LAB,CTR SPACE MICROELECTR TECHNOL,PASADENA,CA 91109

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 25期

关键词：

D O I：

10.1063/1.110123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report the fabrication of GaN/AlN short-period superlattices using switched atomic layer epitaxy. Superlattice structures with GaN well thicknesses ranging from 2.6 to 20.8 angstrom (with AlN barrier thicknesses of 2.5, 7.5, and 15 angstrom) were deposited over basal plane sapphire and characterized for their structure, crystallinity, and optical properties. Cross-sectional transmission electron micrographs indicate GaN/AlN interfaces and the superlattice surfaces are atomically smooth. The structures exhibit strong room temperature photoluminescence and a sharp absorption edge indicating a high optical quality.

引用

页码：3470 / 3472

页数：3

共 15 条

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