BAND-STRUCTURE-DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS

被引：239

作者：

SHICHIJO, H ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.23.4197

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4197 / 4207

页数：11

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