USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS

被引：73

作者：

COLINGE, JP

DEMOULIN, E

BENSAHEL, D

AUVERT, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 04期

关键词：

D O I：

10.1063/1.93507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：346 / 347

页数：2

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[8] LATERAL EPITAXIAL-GROWTH IN POLY-SI FILM OVER SIO2 FROM SINGLE-SI SEED BY SCANNING CW AR LASER ANNEALING
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