USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS

被引：73

作者：

COLINGE, JP

DEMOULIN, E

BENSAHEL, D

AUVERT, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 04期

关键词：

D O I：

10.1063/1.93507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：346 / 347

页数：2

共 9 条

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[6] RECRYSTALLIZATION OF SI ON AMORPHOUS SUBSTRATES BY DOUGHNUT-SHAPED CW AR LASER-BEAM [J].

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[7] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J].

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[8] LATERAL EPITAXIAL-GROWTH IN POLY-SI FILM OVER SIO2 FROM SINGLE-SI SEED BY SCANNING CW AR LASER ANNEALING [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :L176-L178

[9] THE USE OF BEAM SHAPING TO ACHIEVE LARGE-GRAIN CW LASER-RECRYSTALLIZED POLYSILICON ON AMORPHOUS SUBSTRATES [J].

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GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1981, 39 (06) :498-500

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