PHOTOCURRENT AND PHOTOLUMINESCENCE FROM QUANTUM-CONFINED ELECTRONS IN PERIODICALLY DELTA-DOPED SI-GAAS

被引：3

作者：

MAAREF, H

MEJRI, H

PRIESTER, C

BARRAU, J

BACQUET, G

BOURGOIN, JC

机构：

[1] INST ELECTR & MICROELECTR NORD,DEPT ISEN,F-59046 LILLE,FRANCE

[2] INSA,DEPT GENIE PHYS,CNRS,PHYS SOLIDES LAB,F-31077 TOULOUSE,FRANCE

[3] UNIV PARIS 06,CNRS,PHYS SOLIDES GRP,F-75251 PARIS,FRANCE

[4] UNIV PARIS 07,F-75251 PARIS,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 03期

关键词：

D O I：

10.1063/1.354759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photocurrent and photoluminescence experiments performed on periodical delta-doped GaAs reveal a signature of quantum-confined interband transitions. We present in this structure the observation of the transition energy at low temperature in the photocurrent spectrum.

引用

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页码：1987 / 1991

页数：5

相关论文

共 19 条

[1] 3-TERMINAL DELTA-DOPED BARRIER SWITCHING DEVICE WITH S-SHAPED NEGATIVE DIFFERENTIAL RESISTANCE [J].

BAILLARGEON, JN ;

CHENG, KY ;

LASKAR, J ;

KOLODZEY, J .

APPLIED PHYSICS LETTERS, 1989, 55 (07) :663-665

[2] OPTICAL INVESTIGATIONS OF THE HIGH-DENSITY ELECTRON-GAS IN PSEUDOMORPHIC INXGA1-XAS QUANTUM-WELL STRUCTURES [J].

COLVARD, C ;

NOURI, N ;

LEE, H ;

ACKLEY, D .

PHYSICAL REVIEW B, 1989, 39 (11) :8033-8036

[3] STUDIES OF EXCITON LOCALIZATION IN QUANTUM-WELL STRUCTURES BY NONLINEAR-OPTICAL TECHNIQUES [J].

HEGARTY, J ;

STURGE, MD .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1985, 2 (07) :1143-1154

[4] PHOTOLUMINESCENCE STUDY OF SI-DELTA-DOPED GAAS [J].

HENNING, JCM ;

KESSENER, YARR ;

KOENRAAD, PM ;

LEYS, MR ;

VANDERVLEUTEN, W ;

WOLTER, JH ;

FRENS, AM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (11) :1079-1087

[5] IMPROVEMENT OF TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES BY ATOMIC PLANAR DOPING [J].

ISHIKAWA, T ;

OGASAWARA, K ;

NAKAMURA, T ;

KURODA, S ;

KONDO, K .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1937-1940

[6] PHOTOLUMINESCENCE LINE-SHAPE IN DEGENERATE SEMICONDUCTOR QUANTUM WELLS [J].

LYO, SK ;

JONES, ED .

PHYSICAL REVIEW B, 1988, 38 (06) :4113-4119

[7] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J].

MALIK, RJ ;

AUCOIN, TR ;

ROSS, RL ;

BOARD, K ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1980, 16 (22) :836-837

[8] THE DX CENTER IN SI-PLANAR-DOPED AL0.32GA1-0.32AS [J].

MEJRI, H ;

SELMI, A ;

MAAREF, H ;

BOURGOIN, JC .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) :4060-4063

[9]

Pankove J. I., 1975, OPTICAL PROCESSES SE

[10] THEORETICAL APPROACH FOR N-I-P-I SILICON [J].

PRIESTER, C ;

ALLAN, G ;

LANNOO, M ;

FISHMAN, G .

PHYSICAL REVIEW B, 1987, 35 (06) :2904-2908