O- ESCAPE DURING THE OXIDATION OF CESIUM

被引：66

作者：

GREBER, T ^{[1
]}

GROBECKER, R ^{[1
]}

MORGANTE, A ^{[1
]}

BOTTCHER, A ^{[1
]}

ERTL, G ^{[1
]}

机构：

[1] TASC,I-24012 TRIESTE,ITALY

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.70.1331

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Exposure of Cs surfaces to O2 causes ejection of O- ions with low yields (approximately 10(-8) per incident O2 molecule) during the first stages of dissociative chemisorption (followed by exoelectron emission at higher exposures), although the work function of the surface exceeds the electron affinity of O and the energetics of the overall reaction is almost zero. A mechanism is proposed whereafter the release of O- is a consequence of strong repulsion in O-2(2-) species intermediately formed in front of the surface.

引用

页码：1331 / 1334

页数：4

共 20 条

[1]

BOTTCHER A, 1991, J CHEM PHYS, V95, P3756, DOI 10.1063/1.460826

[2] NONADIABATIC SURFACE-REACTION - MECHANISM OF ELECTRON-EMISSION IN THE CS+O-2 SYSTEM [J].