INFRARED DIODE-LASER SPECTROSCOPY OF THE ELECTRONIC GROUND-STATE OF GED (X2-PI-1/2)

被引:3
作者
HUHN, G
SIMON, U
PETRI, M
ZIMMERMANN, W
URBAN, W
机构
[1] Institut für Angewandte Physik der Universität Bonn, Bonn 1, Wegeierstraße 8
[2] Bayer AG, Leverkusen
关键词
D O I
10.1080/00268979200101841
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The fundamental and the first hot bands of the GeD radical in the X2-PI-1/2 state have been detected by tunable diode laser spectroscopy. Transitions from the five naturally occurring isotopes of germanium have been observed. Using an effective Hamiltonian, a set of molecular parameters for the X2-PI state was deter-mined using our data combined with those of Zimmermann et al. (1990, Molecular Physics, 70, 167). Values for the vibrational correction to the fine structure constant-alpha(A), the vibrational correction to the LAMBDA-type doubling constant-alpha(p+2q) and the spin-rotation constant-gamma were determined.
引用
收藏
页码:1029 / 1036
页数:8
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