GROWTH-MECHANISM OF EPITAXIAL SILICON-CARBIDE PRODUCED USING RAPID THERMAL CVD

A rapid thermal chemical vapour deposition system has been used for the growth of epitaxial silicon carbide layers on <111> and <100> silicon substrates. Silane/propane gas chemistry has been employed at growth temperatures less than 1000-degrees-C. The growth mechanism for SiC may be considered as carbonation of silane species adsorbed on the wafer surface. Sufficient propane is present in the gas ambient to allow complete carbonation, with the carbon concentration in the film saturating at 50%.