EMISSION AND ABSORPTION OF PHONONS BY THE 2-DIMENSIONAL ELECTRON-GAS IN A GAAS MODFET STRUCTURE

被引：14

作者：

WIGMORE, JK

EROL, M

SAHRAOUITAHAR, M

WILKINSON, CDW

DAVIES, JH

STANLEY, C

机构：

[1] Sch. of Phys. and Mater., Lancaster Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 09期

关键词：

Phonons--Absorption - Semiconducting Gallium Arsenide - Spectroscopy; Emission;

D O I：

10.1088/0268-1242/6/9/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have observed both emission and absorption of phonons by the two-dimensional electron gas in a GaAs modulation-doped field effect transistor (MODFET). For the first time in this system directly emitted LA phonons were seen, in addition to the TA products of LO down-conversion. The angular dependence of the LA feature suggested that its origin was piezoelectric not deformation potential coupling. Direct absorption of phonons by the 2DEG was found to have a response time approximately ns, so that the transmission stop bands of a superlattice phonon filter could be used as a dispersive spectrometer.

引用

页码：837 / 840

页数：4