共 6 条
ORGANOMETALLIC VPE GROWTH OF INAS
被引:10
作者:

FUKUI, T
论文数: 0 引用数: 0
h-index: 0
机构: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

HORIKOSHI, Y
论文数: 0 引用数: 0
h-index: 0
机构: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
机构:
[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
关键词:
D O I:
10.1143/JJAP.18.2157
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
[No abstract available]
引用
收藏
页码:2157 / 2158
页数:2
相关论文
共 6 条
[1]
USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS
[J].
MANASEVI.HM
;
SIMPSON, WI
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973, 120 (01)
:135-137

MANASEVI.HM
论文数: 0 引用数: 0
h-index: 0
机构:
N AMER ROCKWELL CORP,RES & TECHNOL DIV,ANAHEIM,CA 92803 N AMER ROCKWELL CORP,RES & TECHNOL DIV,ANAHEIM,CA 92803

SIMPSON, WI
论文数: 0 引用数: 0
h-index: 0
机构:
N AMER ROCKWELL CORP,RES & TECHNOL DIV,ANAHEIM,CA 92803 N AMER ROCKWELL CORP,RES & TECHNOL DIV,ANAHEIM,CA 92803
[2]
USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .3. STUDIES OF EPITAXIAL III-V ALUMINUM COMPOUND FORMATION USING TRIMETHYLALUMINUM
[J].
MANASEVIT, HM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971, 118 (04)
:647-+

MANASEVIT, HM
论文数: 0 引用数: 0
h-index: 0
[3]
USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS
[J].
MANASEVIT, HM
;
SIMPSON, WI
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969, 116 (12)
:1725-+

MANASEVIT, HM
论文数: 0 引用数: 0
h-index: 0

SIMPSON, WI
论文数: 0 引用数: 0
h-index: 0
[4]
SUBMICRON GAAS EPITAXIAL LAYER FROM DIETHYLGALLIUMCHLORIDE AND ARSINE
[J].
NAKAYAMA, Y
;
OHKAWA, S
;
HASHIMOTO, H
;
ISHIKAWA, H
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976, 123 (08)
:1227-1231

NAKAYAMA, Y
论文数: 0 引用数: 0
h-index: 0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN

OHKAWA, S
论文数: 0 引用数: 0
h-index: 0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN

HASHIMOTO, H
论文数: 0 引用数: 0
h-index: 0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN

ISHIKAWA, H
论文数: 0 引用数: 0
h-index: 0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
[5]
PROPERTIES OF EPITAXIAL GAAS LAYERS FROM A TRIETHYL GALLIUM AND ARSINE SYSTEM
[J].
SEKI, Y
;
TANNO, K
;
IIDA, K
;
ICHIKI, E
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975, 122 (08)
:1108-1112

SEKI, Y
论文数: 0 引用数: 0
h-index: 0
机构: NIPPON ELECT CO LTD, CENT RES LABS, 1753 SHIMONUMABE, KAWASAKI, JAPAN

TANNO, K
论文数: 0 引用数: 0
h-index: 0
机构: NIPPON ELECT CO LTD, CENT RES LABS, 1753 SHIMONUMABE, KAWASAKI, JAPAN

IIDA, K
论文数: 0 引用数: 0
h-index: 0
机构: NIPPON ELECT CO LTD, CENT RES LABS, 1753 SHIMONUMABE, KAWASAKI, JAPAN

ICHIKI, E
论文数: 0 引用数: 0
h-index: 0
机构: NIPPON ELECT CO LTD, CENT RES LABS, 1753 SHIMONUMABE, KAWASAKI, JAPAN
[6]
ORGANOMETALLIC VPE GROWTH OF A1XGA1-XAS
[J].
STRINGFELLOW, GB
;
HALL, HT
.
JOURNAL OF ELECTRONIC MATERIALS,
1979, 8 (03)
:201-226

STRINGFELLOW, GB
论文数: 0 引用数: 0
h-index: 0

HALL, HT
论文数: 0 引用数: 0
h-index: 0