ON THE MECHANISM OF OXYGEN-CONTENT REDUCTION BY ANTIMONY DOPING OF CZOCHRALSKI SILICON MELTS

In order to study the mechanism of reduced oxygen content in antimony-doped silicon crystals, weight analysis experiments have been performed. It is concluded that the phenomenon is due to increased evaporation rate of SiO from the melt surface. By thermodynamic calculations and scanning electron microscopy studies, the evaporated deposits from antimony-doped silicon melts were analyzed. The deposits were silicon oxide, silicon, and antimony. No antimony oxide could be found. The effects of antimony doping on the oxygen equilibrium solubility and on the viscosity of silicon melts have also been calculated.