TOTAL DOSE AND TRANSIENT RADIATION EFFECTS ON GAAS MMICS

被引：12

作者：

MEULENBERG, A ^{[1
]}

HUNG, HLA ^{[1
]}

PETERSON, KE ^{[1
]}

ANDERSON, WT ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期

关键词：

Manuscript received April 21; 1988; revised July 11; 1988. The portion of this work performed at the COMSAT Laboratories was funded by the World Systems Division of the Communications Satellite Corporation. The portion of this work performed at the NRL was supported by the DNA and by DARPA. A. Meulenberg; H.-L; A; Hung; and K. E. Peterson are with the COM-SAT Laboratories; Clarksburg; MD 20871-9475. W. T. Anderson is with the Naval Research Laboratory; Washington; DC 20375. IEEE Log Number 8823782;

D O I：

10.1109/16.8786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2125 / 2132

页数：8

共 9 条

[1] FAST-NEUTRON TOLERANCE OF GAAS JFETS OPERATING IN HOT-ELECTRON RANGE [J].