ELECTRONIC EFFECTS ON DEFECT BEHAVIOR IN SEMICONDUCTORS

被引：8
作者：
BOURGOIN, JC
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1989年 / 112卷 / 1-2期
关键词：
D O I：
10.1080/10420158908212978
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
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页码：29 / 36
页数：8
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共 37 条
[1]  
Bar-Yam Y., 1985, Thirteenth International Conference on Defects in Semiconductors, P261
[2]   CALCULATION OF THE TOTAL ENERGY OF CHARGED POINT-DEFECTS USING THE GREENS-FUNCTION TECHNIQUE [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1984, 30 (04) :1853-1866
[3]   BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1129-1132
[4]   RECOMBINATION ENHANCED DEFECT ANNEALING IN N-INP [J].
BENTON, JL ;
LEVINSON, M ;
MACRANDER, AT ;
TEMKIN, H ;
KIMERLING, LC .
APPLIED PHYSICS LETTERS, 1984, 45 (05) :566-568
[5]  
Bourgoin J., 1983, POINT DEFECTS SEMICO
[6]   NEW MECHANISM FOR INTERSTITIAL MIGRATION [J].
BOURGOIN, JC ;
CORBETT, JW .
PHYSICS LETTERS A, 1972, A 38 (02) :135-&
[7]  
BOURGOIN JC, 1973, J CHEM PHYS, V59, P4042, DOI [10.1063/1.1680596, 10.1063/1.433143]
[8]   ENHANCED DIFFUSION MECHANISMS [J].
BOURGOIN, JC ;
CORBETT, JW .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :157-188
[9]   NATIVE DEFECTS IN GALLIUM-ARSENIDE [J].
BOURGOIN, JC ;
VONBARDELEBEN, HJ ;
STIEVENARD, D .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :R65-R91
[10]  
CAR R, 1979, APPL PHYS LETT, V35, P269
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