ANALYTICAL MODEL FOR EPITAXIAL BIPOLAR-TRANSISTOR

被引：9
作者：
GRUNG, BL [1 ]
WARNER, RM [1 ]
机构：
[1] UNIV MINNESOTA, DEPT ELECT ENGN, MINNEAPOLIS, MN 55455 USA
来源：
SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 09期
关键词：
D O I：
10.1016/0038-1101(77)90003-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：753 / 771
页数：19
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