RAPID THERMAL ANNEALING OF BE+-IMPLANTED IN0.52AL0.48AS

被引：4

作者：

LEE, W ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT, CTR MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA

来源：

关键词：

D O I：

10.1063/1.338262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5272 / 5278

页数：7

共 14 条

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[4] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF UNDOPED IN1-XALXAS ON INP
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[6] HIROSE K, 1986, 12TH P INT S GAAS RE, P529
[7] THE GROWTH OF HIGH MOBILITY INGAAS AND INAIAS LAYERS BY MOLECULAR-BEAM EPITAXY
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[9] Lee W., UNPUB
[10] GALNAS-ALLNAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
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