TEMPERATURE-DEPENDENCE OF MOLECULAR-BEAM EPITAXIAL-GROWTH RATES FOR INXGA1-XAS AND INXAL1-XAS

被引：32

作者：

CHIKA, S

KATO, H

NAKAYAMA, M

SANO, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 09期

关键词：

D O I：

10.1143/JJAP.25.1441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1441 / 1442

页数：2

共 8 条

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