DYNAMICAL ANALYSIS OF A RHEED PATTERN FROM THE SI(111)-7X7 SURFACE

被引:10
|
作者
MA, Y
LORDI, S
EADES, JA
机构
[1] Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana
关键词
D O I
10.1016/0039-6028(94)90052-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The multislice formalism of Cowley and Moodie [Acta Crystallogr. 10 (1957) 609] with a recently developed edge-patching method has been applied to the analysis of an experimental RHEED (reflection high energy electron diffraction) pattern from the Si(111)-7 x 7 surface. Several data sets of atomic coordinates for the Si(111)-7 x 7 reconstruction, optimized by different approaches, have been evaluated based upon comparison of visually estimated intensity ordering between the observed and calculated patterns. The results show that compared to other data sets, the coordinates optimized by ab initio-parallel computation appear closer to the true structure, so far as the RHEED in the current scheme can judge. The analysis also shows that the intensities of a RHEED pattern taken from the surface are highly surface sensitive. The surface sensitivity extends to the whole selvage region of interest with a depth of approximately 10 angstrom. The correlation between mean inner potential V0 and the angle of incidence theta has also been investigated. This indicates that if the angle of incidence is measured with errors less than +/-0.05-degrees for this specific case, V0 can be determined with the accuracy of approximately +/-10%, and vice versa.
引用
收藏
页码:317 / 334
页数:18
相关论文
共 50 条
  • [1] STUDY OF THE SI(111)7X7 SURFACE BY RHEED ROCKING CURVE ANALYSIS
    HANADA, T
    INO, S
    DAIMON, H
    SURFACE SCIENCE, 1994, 313 (1-2) : 143 - 154
  • [3] RHEED STUDY ON THE GE/SI(111) AND SI/GE(111) SYSTEMS - REACTION OF GE WITH THE SI(111)(7X7) SURFACE
    ICHIKAWA, T
    INO, S
    SURFACE SCIENCE, 1984, 136 (2-3) : 267 - 284
  • [4] Effect of surface plasmons on energy filtered RHEED rocking curves from a Si(111)-7x7 surface
    Hara, S
    Watanabe, K
    Horio, Y
    Hashimoto, I
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (02): : 925 - 936
  • [5] PHOTOEMISSION FROM K/SI(111)7X7 AND CS/SI(111)7X7
    DITZINGER, UA
    LUNAU, C
    SCHIEWECK, B
    TOSCH, S
    NEDDERMEYER, H
    HANBUCKEN, M
    SURFACE SCIENCE, 1989, 211 (1-3) : 707 - 715
  • [6] RHEED INTENSITY ANALYSIS OF SI(111)7X7 AT ONE-BEAM CONDITION
    ICHIMIYA, A
    SURFACE SCIENCE, 1987, 192 (2-3) : L893 - L898
  • [7] Fermi surface of Si(111)7X7
    Losio, R
    Altmann, KN
    Himpsel, FJ
    PHYSICAL REVIEW B, 2000, 61 (16) : 10845 - 10853
  • [8] LEED ANALYSIS OF SI(111)-(7X7) SURFACE MODELS
    MILLER, DJ
    HANEMAN, D
    WALKER, LW
    SURFACE SCIENCE, 1980, 94 (2-3) : 555 - 563
  • [9] THE EPITAXIAL-GROWTH OF CU ON SI(111)7X7 - A RHEED STUDY
    BOOTSMA, TIM
    HIBMA, T
    SURFACE SCIENCE, 1995, 331 : 636 - 640
  • [10] Analysis of single Si atoms deposited on the Si(111)7x7 surface
    Uchida, H
    Watanabe, S
    Mase, M
    Kuramochi, H
    Aono, M
    THIN SOLID FILMS, 2000, 369 (1-2) : 73 - 78