OPTICAL PROPERTIES OF SIAS SINGLE-CRYSTALS

被引：7

作者：

KUNIOKA, A

HO, KK

SAKAI, Y

机构：

[1] AOYAMA GAKUIN UNIV,DEPT ELECT ENGN & ELECTR,SETAGAYA,TOKYO 157,JAPAN

[2] TOKYO INST TECHNOL,DEPT ELECTR,MEGURO,TOKYO 152,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 04期

关键词：

D O I：

10.1063/1.1662471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1895 / 1896

页数：2

共 8 条

[1] THE OPTICAL CONSTANTS OF GERMANIUM IN THE INFRA-RED AND VISIBLE [J].

BRATTAIN, WH ;

BRIGGS, HB .

PHYSICAL REVIEW, 1949, 75 (11) :1705-1710

[2] ELECTRICAL PROPERTIES OF MELT-GROWN SILICON MONOARSENIDE [J].

CHU, TL ;

KELM, RW .

SOLID-STATE ELECTRONICS, 1971, 14 (12) :1259-&

[3] CRYSTAL GROWTH OF SILICON ARSENIDE [J].

CHU, TL ;

KELM, RW ;

CH, SSC .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) :1169-&

[4] ELECTRICAL PROPERTIES OF ANOMALOUSLY COMPOSED DALTONIDES [J].

HULLIGER, F ;

MOOSER, E .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (02) :283-+

[5] Silicium arsenide [J].

Klemm, W ;

Pirscher, P .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1941, 247 (03) :211-220

[6] CRYSTAL STRUCTURES OF SEMICONDUCTORS + GENERAL VALENCE RULE [J].

PEARSON, WB .

ACTA CRYSTALLOGRAPHICA, 1964, 17 (01) :1-&

[7] CRYSTAL STRUCTURE OF SIAS [J].

WADSTEN, T .

ACTA CHEMICA SCANDINAVICA, 1965, 19 (05) :1232-&

[8] Germaniumphosphide [J].

Zumbusch, M ;

Heimbrecht, M ;

Biltz, W .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1939, 242 (03) :237-248

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