DESIGN OF BROAD-BAND GAAS-FET POWER-AMPLIFIERS

被引:9
作者
RAUSCHER, C
WILLING, HA
机构
关键词
D O I
10.1109/TMTT.1980.1130224
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1054 / 1059
页数:6
相关论文
共 7 条
[1]   LARGE-SIGNAL GAAS MESFET OSCILLATOR DESIGN [J].
JOHNSON, KM .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (03) :217-227
[2]   SIMPLE-MODEL OF LARGE-SIGNAL PROPERTIES OF 1 W FET AT 5 GHZ [J].
KOTZEBUE, KL ;
EHLERS, ER .
ELECTRONICS LETTERS, 1979, 15 (08) :237-238
[3]  
MONROE JW, 1977, MICROWAVES, V16, P60
[4]   SIMULATION OF NON-LINEAR MICROWAVE FET PERFORMANCE USING A QUASI-STATIC MODEL [J].
RAUSCHER, C ;
WILLING, HA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (10) :834-840
[5]  
RAUSCHER C, 1979, 9TH P EUR MICR C, P287
[6]   DESIGN OF A HIGH-GAIN FET AMPLIFIER OPERATING AT 4.4-5.0 GHZ [J].
SECHI, FN ;
PAGLIONE, RW .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (03) :285-290
[7]   TECHNIQUE FOR PREDICTING LARGE-SIGNAL PERFORMANCE OF A GAAS MESFET [J].
WILLING, HA ;
RAUSCHER, C ;
DESANTIS, P .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (12) :1017-1023