SURFACE GENERATION CURRENTS IN ANODIC DISSOLUTION OF N-TYPE SILICON

被引：0

作者：

TIMASHEV, SF ^{[1
]}

KUZMAK, AE ^{[1
]}

机构：

[1] ACAD SCI USSR,PHYS CHEM INST,MOSCOW,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1196 / 1197

页数：2

共 8 条

[1] N+ SILICON-ELECTROLYTE INTERFACE CAPACITANCE
MEEK, RL
[J]. SURFACE SCIENCE, 1971, 25 (03) : 526 - &
[2] SURFACE CARRIER GENERATION INCLUDING TUNNEL TRANSITIONS
PREIER, H
[J]. SURFACE SCIENCE, 1969, 17 (01) : 125 - &
[3] ON THE THEORY OF THE THERMAL CAPTURE OF ELECTRONS IN SEMI-CONDUCTORS
RICKAYZEN, G
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1227): : 480 - 494
[4] Timashev S. F., 1972, Soviet Physics - Solid State, V14, P136
[5] TIMASHEV SF, 1972, FIZ TVERD TELA+, V14, P171
[6] TIMASHEV SF, 1972, FIZIKA TEKHNIKA POLU, V6, P1372
[7] Vol'kenshtein F. F., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P1460
[8] VOLKENSHTEIN FF, 1972, SOV PHYS SEMICOND+, V5, P1277