DEPTH RESOLUTION DEGRADATION OF SPUTTER-PROFILED INP-INXGA1-XASYP1-Y INTERFACES CAUSED BY CONE FORMATION

被引：28

作者：

WILLIAMS, RS

NELSON, RJ

SCHLIER, AR

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 10期

关键词：

D O I：

10.1063/1.91332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：827 / 829

页数：3

共 10 条

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[6] INFLUENCE OF ATOMIC MIXING AND PREFERENTIAL SPUTTERING ON DEPTH PROFILES AND INTERFACES [J].

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[7] EFFECTS OF ION SPUTTERING ON SEMICONDUCTOR SURFACES [J].

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[8] NEAR-EQUILIBRIUM LPE GROWTH OF LOW THRESHOLD CURRENT-DENSITY IN 1-XGAXASYP1-Y (LAMBDA = 1.35-MU) DH LASERS [J].

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APPLIED PHYSICS LETTERS, 1979, 35 (09) :654-656

[9]

WILLIAMS RS, UNPUBLISHED

[10]

Wilson I. H., 1973, Radiation Effects, V18, P95, DOI 10.1080/00337577308234723

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