A POSSIBLE MECHANISM OF ELECTRON INJECTION FOR THE THRESHOLD VOLTAGE SHIFT OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AT LOW-VOLTAGE

被引：0

作者：

TANIMOTO, S

MIHARA, T

ASADA, K

SUGANO, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.343333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4061 / 4065

页数：5

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