A POSSIBLE MECHANISM OF ELECTRON INJECTION FOR THE THRESHOLD VOLTAGE SHIFT OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AT LOW-VOLTAGE

被引：0
|
作者：
TANIMOTO, S
MIHARA, T
ASADA, K
SUGANO, T
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期
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D O I：
10.1063/1.343333
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：4061 / 4065
页数：5
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