MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB

In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V-1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date. © 1994 American Institute of Physics.