REDUCTION OF SHEAR-STRENGTH AND PHASE-TRANSITION IN SHOCK-LOADED SILICON

被引：55

作者：

GOTO, T

SATO, T

SYONO, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 06期

关键词：

D O I：

10.1143/JJAP.21.L369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L369 / L371

页数：3

共 12 条

[1] ELECTRICAL MEASUREMENTS IN SILICON UNDER SHOCK-WAVE COMPRESSION [J].

COLEBURN, NL ;

FORBES, JW ;

JONES, HD .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5007-5012

[2] REVISED CALIBRATION FOR HIGH PRESSURE ELECTRICAL RESISTANCE CELL [J].

DRICKAMER, HG .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (11) :1667-+

[3]

GOTO T, 1980, SCI REP RES TOHOKU A, V29, P32

[4] AXIAL YIELD STRENGTHS AND 2 SUCCESSIVE PHASE TRANSITION STRESSES FOR CRYSTALLINE SILICON [J].

GUST, WH ;

ROYCE, EB .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :1897-&

[5] CRYSTAL STRUCTURES AT HIGH PRESSURES OF METALLIC MODIFICATIONS OF SILICON AND GERMANIUM [J].

JAMIESON, JC .

SCIENCE, 1963, 139 (355) :762-&

[6]

JONES OE, 1971, NBS SPEC PUBL, V326, P229

[7] ELASTIC MODULI OF SILICON VS HYDROSTATIC PRESSURE AT 25.0DEGREECS + MINUS195.8DEGREESC [J].

MCSKIMIN, HJ ;

ANDREATCH, P .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) :2161-&

[8] PRESSURE INDUCED PHASE TRANSITIONS IN SILICON, GERMANIUM AND SOME 3-5 COMPOUNDS [J].

MINOMURA, S ;

DRICKAMER, HG .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAY) :451-&

[9]

PAVLOVSKII MN, 1968, FIZ TVERD TELA+, V9, P2514

[10] ULTRAHIGH PRESSURE DIAMOND-ANVIL CELL AND SEVERAL SEMICONDUCTOR PHASE-TRANSITION PRESSURES IN RELATION TO FIXED-POINT PRESSURE SCALE [J].

PIERMARINI, GJ ;

BLOCK, S .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (08) :973-979

← 1 2 →